Abstract
The 1.5 to 5.0 μm wavelength region is a “new band” for sensing, communications, night vision and other significant applications enabled by emerging SiGeSn integrated-photonics technology. This paper gives an overview of potential mid-infrared applications and device capabilities. After R&D, it is likely that all photonic components including on-chip laser diodes, photodetectors, electro-modulators and switches can be constructed as SiGeSn-A/SiGeSn-B heterostructures, such as quantum-well devices. Particularly in the 1.9 to 2.5 μm wavelength range where 300K operation of an all-group-IV photonic integrated circuit (PIC) can be engineered, this silicon-based PIC is a prime candidate for insertion into a high-volume CMOS or BiCMOS foundry manufacturing process, thereby yielding low-cost OEICs.
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