Abstract
Voltage control of magnetism has been considered and proven to be an efficient actuation protocol to boost energy efficiency in a widespread range of spintronic devices. In particular, the study of voltage-induced changes in magnetism by the magneto-ionic effect has rapidly accelerated during the past few years due to the versatile advantages of effective control, non-volatile nature, low-power cost, etc. In this perspective, we briefly outline the recent research progress on the voltage-controlled magneto-ionic effect by using two representative dielectric gating materials [ionic liquids (ILs) and ionic conductors] in different functional solid-state heterostructures and devices, mainly including both the ferroic-order [ferromagnetic, ferroelectric (FE), and multiferroic] oxides and magnetic metal-based heterostructure systems. Within the framework of ferroic oxide heterostructures, we have also extended the IL control to FE materials, clarifying that FE properties can also be tailored by electrostatic and electrochemical methods. Finally, we discuss the challenges and future aspects of magneto-ionics, which would inspire more in-depth studies and promote the practical applications.
Highlights
With the advent of the Big-Data era,[1] cloud computing, Internet of Things, 5G communication, artificial intelligence, and other technologies continue to rise and infiltrate every corner of people’s daily life, leading to geometric growth of today’s data volume
Using electric voltage to manipulate magnetism usually enables the development of spintronic devices with a combination of advantages including low power, on-chip design, non-volatile nature, reversibility, high speed, and good compatibility with the conventional semiconductor industry.[4,5]
We present magneto-ionic controlled multiferroic oxide heterostructures, mainly referring to the ferroelectric/ferromagnetic (FE/FM) bilayers driven by electric-fieldcontrolled ionic liquid gating (ILG).[12]
Summary
With the advent of the Big-Data era,[1] cloud computing, Internet of Things, 5G communication, artificial intelligence, and other technologies continue to rise and infiltrate every corner of people’s daily life, leading to geometric growth of today’s data volume. The utilization of aqueous electrolytes (e.g., 1M KOH) in electrochemical cells[21,40] and use of resistive switching devices[18,20,41–44] to achieve magnetic control have made important contributions to the field of magneto-ionics in recent years With these liquidstate and solid-state gate electrolytes, the insertion/removal of ions, such as O2−,15–18 H+,27,30,45,46 Li+,44,47–49 F−,21,50 and N2,19 into/from target magnets enable an effective control of magnetism by electric fields via an electrochemical process, providing a fine perspective on energy-efficient, non-volatile, and high-density data storage in spintronics. (ii) Due to the semiconductor or even insulator properties, oxide films usually display a much larger screening length, guaranteeing a strong electric-field effect for the manipulation of magnetic properties.[4] (iii) Transition metal oxides, especially ABO3 perovskites, are an important class of functional materials with a wide range of physical, chemical, and electrochemical properties based on oxygen vacancies (oxygen ions),[53] providing a good opportunity for voltage-driven ion migration. In many cases of ILG control, such as the magnetoelectric supercapacitors in La0.74Sr0.26MnO3,55,56 magnetic modulation of La0.5Sr0.5CoO3-δ,57 electrical modulation of interface magnetic states in metal Co films,[58] voltage modulation of Ruderman–Kittel–Kasuya–Yosida (RKKY) interaction via ILG in synthetic antiferromagnetic multilayers of FeCoB/Ru/FeCoB and (Pt/Co)2/Ru/(Co/Pt)[2,59] etc., it has been proved that the two mechanisms coexist
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