Emerging nanoelectronics: multi-functional nanowires

Abstract

This talk aims to demonstrate that a silicon-on-insulator (SOI) nanowire technological platform could be a realistic approach to address the development of various types of multifunctional devices. Particularly, SOI nanowires could be a unique technological platform to co-fabricate: (i) nano-scaled solid-state MOS devices (such as the multi-gate MOSFETs); (ii) single-electron transistors and single electron memories; (iii) solid-state optoelectronic nano-scaled devices (modulators, optical switches, filters or even optical, interconnects for on-chip clock distribution...); and (iv) MEMS nano-resonators for full integrated RF IC functions. All these various categories of devices can take advantage of SOI intrinsic properties (technological toolset similar to silicon, natural lateral and vertical isolation, specific electrical, mechanical and optical properties) together with their aggressive scalability. Moreover, such, a technological platform could be hybridized with other nanotechnologies like molecular devices and carbon nanotubes. Some key examples, based on ongoing research projects at the Swiss Federal Institute of Technology Lausanne and world wide state-of-the-art was presented.