Abstract

The present program is a continuation of earlier efforts to develop electrochemically deposited films of compound semiconductors and solar cells made from them. Primary objectives include the development and characterization of controllably doped n and p type CdTe films with densities of 5.8 gm/cm/sup 3/, appropriate grain sizes, good film morphology and freedom from pinholes, and carrier concentrations from 10/sup 16/ to 10/sup 18//cm/sup 3/. The end result of the effort is to demonstrate by the seventh month, or September 15, 1980, solar cells over 1 cm/sup 2/ in area showing total area conversion efficiencies exceeding 4%. By the end of the first quarter, milestones were met calling for us to supply characterized n type CdTe films that were reproducible and free from pinholes. Also, prototype electrodeposited CdTe solar cells were fabricated and evaluated. Characterizations of p-type CdTe and ZnTe films were complicated by interferences existing between them and adjacent substrates. A number of devices, including the glass/ITO/n-CdTe:In/Au Schottky structure and an ITO/n-CdTe:In/p-Cu/sub 2-x/Te heterojunction, have been fabricated. The highest internal efficiency of the Schottky devices, which have yet to have fingered grids and anti-reflection coatings applied, is 4%. The heterojunction is a larger area device 2 cm/sup 2/ inmore » area. It shows promise of meeting the 4% total area efficiency as does the Schottky when grids and A/R coatings are applied.« less

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