Abstract

Newly discovered ferroelectric HfO 2 opens new pathways toward low-power, high-speed, and high-density nonvolatile memories. In this paper, recent research progresses of ferroelectric-HfO 2 memories are introduced: nonvolatile SRAM (NVSRAM) for smart power management, ferroelectric FET (FeFET) with novel channel material for high-density memory, and ferroelectric tunnel junction (FTJ) for ultimately small memory device. Challenges and opportunities of each device technology are discussed.

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