Abstract
Magnetic insulators with strong perpendicular magnetic anisotropy (PMA) play a key role in exploring pure spin current phenomena and developing ultralow-dissipation spintronic devices, rendering them highly desirable to develop new material platforms. Here, we report the epitaxial growth of La2/3Sr1/3MnO3 (LSMO)-SrIrO3 (SIO) composite oxide films (LSMIO) with different crystalline orientations fabricated by a sequential two-target ablation process by pulsed laser deposition. The LSMIO films exhibit high crystalline quality with a homogeneous mixture of LSMO and SIO at an atomic level. Ferrimagnetic and insulating transport characteristics are observed, with the temperature-dependent electric resistivity well fitted by the Mott variable-range-hopping model. Moreover, the LSMIO films show strong PMA. By further constructing all-perovskite-oxide heterostructures of the ferrimagnetic insulator LSMIO and a strong spin-orbital-coupled SIO layer, pronounced spin Hall magnetoresistance (SMR) and spin Hall-like anomalous Hall effect (SH-AHE) were observed. These results illustrate the potential application of the ferrimagnetic insulator LSMIO in developing all-oxide ultralow-dissipation spintronic devices.
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