Emergence of (001) preferred orientation in AlN film using ultrathin intermediate Pt layer

Abstract

<title/>The preferred orientations of AlN films with an intermediate Pt layer have been examined using X-ray diffraction and transmission electron microscopy. It is found that the Pt layer encourages the AlN film into c axis preferred orientation deposition, even though the sputtering conditions would normally lead the AlN film to be deposited with other preferred orientations. The Pt layer also promotes the crystallisation of AlN films. The local epitaxial growth of AlN (001) on Pt (111) may elucidate the effect of the Pt layer on the preferred orientation control.