Embedding electron-deficient nitrogen atoms in polymer backbone towards high performance n-type polymer field-effect transistors.

Abstract

With sp2-nitrogen atoms embedded in an isatin unit, a donor-acceptor (D-A) conjugated polymer AzaBDOPV-2T was developed with a low LUMO level down to -4.37 eV. The lowered LUMO level as well as the conformation-locked planar backbone provide AzaBDOPV-2T with electron mobilities over 3.22 cm2 V-1 s-1 tested under ambient conditions, which is among the highest in n-type polymer field-effect transistors (FETs). Our results demonstrate that embedding electron-deficient sp2-nitrogen in conjugated backbones is an effective approach to develop n-type polymer semiconductors with high performance.