Abstract
This paper proposes an active gate drive method based on a feedforward control for turn-on condition in IGBTs. The transient improvement with minimum undesirable effect on the efficiency is the main objective of this research. The new gate driver (GD) improves the trade-off between switching loss and device stress at the turn-on condition, without getting feedback from the output. The operation principle and implementation of the controller in the GD are presented. The effect of the proposed GD on the transient behaviour, efficiency, junction temperature and electromagnetic interference (EMI) during turn-on switching is evaluated by both simulation and experimental tests. The new GD is evaluated under hard switching condition and various frequencies. Advantages and disadvantages of the method have been discussed.
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