Abstract
Tin nanocrystals embedded in a SiSn layer grown by molecular beam epitaxy on n-type Si are investigated by means of deep level transient spectroscopy. Two Sn related deep traps are observed, depending on the annealing temperature of the samples. A deep level at (Sn1) is observed for annealing temperatures up to C, whereas a level at (Sn2) appears for annealing temperatures above C. Scanning transmission electron microscopy shows the formation of Sn nanocrystals at C, which coincides with the appearance of Sn2. Sn1 is tentatively assigned to a Sn related precursor defect, which transforms upon annealing into either Sn nanocrystals or an interface defect located at the nanocrystal surface.
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