Abstract
Wide-band-gap (WBG) devices and embedding technology offer a huge advantage when increasing the power density of power electronics. However, the miniaturisation leads to new reliability challenges. The critical spot prone to humidity degradation moves outside the actual device under test (DUT) to the periphery, i.e. printed circuit board assemblies (PCBA). In the case of High Voltage Embedding Technology (HVET) devices, the housing of the power element is completely omitted. The materials used in HVET must entirely ensure the moisture protection of the power unit and the passive components of the embedded systems.In this work, results on various batches of PCBA and HVET after several thousand hours of testing in High Voltage-High Humidity High Temperature Reverse Bias (HV-H3TRB) are presented. Failure analyses have identified degradation mechanisms such as conductive anodic filament (CAF) formed inside the FR-4 printed circuit boards (PCB) and anodic migration phenomenon (AMP) in HVET devices as the root cause of failures. Therefore, special preventive procedures are required in harsh climatic conditions.
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