Elucidation of carrier trapping and emission mechanism in quantum dots for information storage applications

Abstract

Background: In order to have single unified memory which has advantages of DRAM and flash memory we have proposed quantum dot memory. Methods/Statistical analysis: In this paper we have theoretically modeled DLTS spectra and re-enacted the capacitance spectroscopie on InAs/GaAs and GaSb/GaAs quantum dot. In order to achieve effective emission rate, a theoretical treatment on thermal and direct tunneling emission is performed. We have analysed four type emission probability of charge carrier such as direct transition, two step transitions, phonon tunneling and direct tunneling process. The results are analyzed and discussed. Findings: In this paper we have found out that hole based quantum device such as GaSb/GaAs has less emission probability than electron based quantum device such as InAs/GaAs because of heavy effective mass. Application/Improvements: For quantum dot to work as single unified memory it need to have advantage of DRAM and flash memory, hence our future work is to find out best suitable quantum dot material which work in all application.