Abstract
Displacing the water remaining on a wafer surface by using condensed IPA improves the effectiveness of IPA-based drying techniques. Although this drying technology has been used for years, recent device technologies have needed extremely high-performance drying processes. We characterized an IPA adsorption phenomenon on a wafer surface by using the batch cleaning system and determined the appropriate drying conditions. Our results revealed that the IPA supply rate had a great influence on watermark formation. This can be prevented by increasing the IPA supply rate because the rapid increase of IPA concentration in the remaining water on wafer surface suppresses the dissolution of silicon into water. Through both understanding of an IPA adsorption on a wafer surface and control of the drying condition, an ultra-clean and IPA-saving drying process with a watermark-free performance for future device technologies can be achieved.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
