Abstract
Perovskite-based solar cells (PSCs) have attracted attraction in the photovoltaic community since their inception in 2009. To optimize the performance of hybrid perovskite cells, a primary and crucial strategy is to unravel the dominant charge transport mechanisms and interfacial properties of the contact materials. This study focused on the charge transfer process and interfacial recombination within the n–i–p architecture of solar cell devices. The motivation for this paper was to investigate the impacts of recombination mechanisms that exist within the interface in order to quantify their effects on the cell performance and stability. To achieve our objectives, we firstly provided a rationale for the photoluminescence and UV-Vis measurements on perovskite thin film to allow for disentangling of different recombination pathways. Secondly, we used the ideality factor and impedance spectroscopy measurements to investigate the recombination mechanisms in the device. Our findings suggest that charge loss in PSCs is dependent mainly on the configuration of the cells and layer morphology, and hardly on the material preparation of the perovskite itself. This was deduced from individual analyses of the perovskite film and device, which suggest that major recombination most likely occur at the interface.
Highlights
Hybrid perovskites are currently regarded as inspiring novel materials for basic studies and practical applications in optoelectronic devices because of their unusual and useful properties emerging from their mix of organic and inorganic constituents [1]
Substrates were dried with N2 gas. On this partially etched substrate, zinc oxide was deposited by radio frequency (RF) magnetron sputtering over a Zinc oxide (ZnO) target
The perovskite crystallinity and the quantity of PbI2 residue are essential to the performance of perovskite solar cells
Summary
Hybrid perovskites are currently regarded as inspiring novel materials for basic studies and practical applications in optoelectronic devices because of their unusual and useful properties emerging from their mix of organic and inorganic constituents [1]. Perovskites demonstrate exceptional optoelectronic properties, such as effective photon recycling, high free-carrier diffusion, and an ambipolar nature to the transfer of electrons and holes [2,3,4]. These intrinsic physical properties are among the main parameters responsible for the high PCE values in PSCs, and are the reason why perovskite materials can function in various configurations. Regardless of the fact that the present record for the highest PCE value in PSCs is 25.2% [5], a profound knowledge of the processes regarding charge transport and recombination among layers and within the perovskite layer is a primary necessity for more improvements [3]. The interfaces between the perovskite film and the contact layers are the main determinants for the PCE and have little impact on the stability of HPSCs [5]
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