Abstract
The current-voltage (I- V) characteristics of the InGaN nanorod light-emitting diode (LED) are evaluated using nanoprobes installed on a field-emission scanning electron microscope. The saturated current of the InGaN nanorod LED (IO = 2 × 10-9A) is found to be orders of magnitude higher than those obtained by downscaling a conventional InGaN LED to a chip size of 300 × 300 μm2 (IO1 = 1 × 10-25 A; IO2 = 1 × 10-14 A). This observation is explained by the fact that the nanorod LED is associated with enhanced tunneling of injected carriers and, therefore, reduction of the defect-assisted leakage current and the diffusion-recombination process that normally occurs in InGaN LEDs.
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