Abstract
Abstract The creation of localized bulk modification using femtosecond pulses inside semiconductors like silicon (Si) is quite challenging whereas it is not difficult to achieve it for dielectric material like fused silica (FS). So, this report addresses the fundamental origin of this issue. By taking simple numerical approach, it has been found that in FS we can deliver stronger fluence due to self-focusing on higher power level as compared to Si. The origin for the above lies on the spatial-temporal pulse-splitting behavior which is dominant in case of FS at the focus, whereas for Si it is only effective after focus. We have also considered the influence of plasma and Kerr terms to elucidate the reason behind such nonlinearities. For FS case, omission of Kerr term dominates whereas for Si the influence of each term does not significantly create self-focusing like FS under a similar focusing condition. This study could make an important guideline for researchers to understand the complexity of laser-matter interaction in transparent materials specifically being studied by many laser processing industries.
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