ELNES analysis for silicon, silicon oxide and their interface

Abstract

We have measured and analyzed Si L23-edge electron energy loss near edge structure (ELNES) spectra for silicon, silicon oxide and their interface. ELNES spectra have been recorded by a combination of high resolution electron energy loss spectroscopy and an installed slit built in a 300 keV transmission electron microscope. The projected slit allows us to have signals about each 0.7 nm width area of the specimen. These spectra change site by site from Si to SiO2. With the aid of multiple scattering calculations, we have discussed the local structure near the interface.