Abstract
Hydrogenated amorphous silicon (a-Si:H) layers formed on textured single crystalline silicon (c-Si) substrates have been characterized by spectroscopic ellipsometry using a tilt angle measurement configuration. The a-Si:H layer thickness determined by this technique (58±2 Å) shows excellent agreement with that evaluated from transmission electron microscopy (56±5 Å). Although no structural change has been observed between a-Si:H layers deposited on flat and textured substrates, the a-Si:H layer thickness was found to decrease by 30% on the textured substrates. The above results demonstrate that the tilt angle ellipsometry measurement is quite effective in characterizing a-Si:H layers incorporated in textured a-Si:H/c-Si heterojunction solar cells.
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