Abstract
Spectroscopic ellipsometry was employed to measure the thickness of ultrathin silicon oxide films prepared in several different aqueous processing solutions used during microelectronics manufacture. Ellipsometric measurements were fit to several different models for the Si/SiO2 interface, with the best fit obtained for a model which assumes the silicon oxide film to be a mixture of SiO2 and amorphous Si. The dielectric function of this mixture was obtained from the Bruggeman effective medium approximation. The silicon oxide film thicknesses following treatment in HF etchant and SC-1 and SC-2 solutions were 8.6(2) Å, 8.9(4) Å, and 8.6(9) Å, respectively.
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