Abstract
We present a study of the Si/SiO 2 interface formation during the growth of Si on SiO 2 using in situ ellipsometry measurements performed at one wavelength (λ=0.4 μm). Variable angle X-ray photoelectron spectroscopy (XPS) is also used to confirm the ellipsometric measurements. In situ ellipsometry and XPS provide evidence for the formation of a SiO x (0< x<2) interlayer between the SiO 2 and Si layers. The variation of x with depth is analysed from (cos Δ, tan ψ) trajectories and the results obtained allow reproduction of the spectroscopic ellipsometry spectra too. The effects of the substrate temperature on the growth are investigated and show that the higher the substrate temperature the larger the interface. The utilisation of a SiO 2/Si multilayer stack for elaborating an omnidirectional reflector, angle-insensitive in the near infrared range, is also presented.
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