Abstract

The method of variable angle spectroscopic ellipsometry usable for the complete optical characterization of inhomogeneous thin films exhibiting complicated thickness non-uniformity together with transition layers at their lower boundaries is presented in this paper. The inhomogeneity of these films is described by means of the multiple-beam interference model. The thickness non-uniformity is taken into account by averaging the elements of the Mueller matrix along the area of the light spot of the ellipsometer on the films. The local thicknesses are expressed using polynomials in the coordinates along the surfaces of the films. The efficiency of the method is illustrated by means of the optical characterization of a selected sample of the polymer-like thin film of SiOxCyHz prepared by plasma enhanced chemical vapor deposition onto the silicon single crystal substrate. The Campi-Coriasso dispersion model is used to determine the spectral dependencies of the optical constants at the upper and lower boundaries of this film. The profiles of these optical constants are determined too. The thickness non-uniformity is described using a model with local thicknesses given by the polynomial with at most quadratic terms. In this way it is possible to determine the geometry of the upper boundary. The thickness and spectral dependencies of the optical constants of the transition layer are determined as well. Imaging spectroscopic reflectometry is utilized for confirming the results concerning the thickness non-uniformity obtained using ellipsometry.

Highlights

  • Thin films play an important role in many branches of fundamental and applied research

  • The complete optical characterization of the homogeneous epitaxial ZnSe thin films exhibiting the combined defect consisting of random roughness of the upper boundaries, thickness non-uniformity corresponding to the wedge-shaped model and overlayers occurring on their upper boundaries was performed using the combined method of spectroscopic ellipsometry and spectroscopic reflectometry in paper [43]

  • In this way one could reliably obtain the values of thickness and optical constants of the transition layer originating in consequence of this pretreating of the silicon substrate

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Summary

Introduction

Thin films play an important role in many branches of fundamental and applied research. In paper [40] the thickness non-uniformity of the homogeneous thin films is expressed by means of the model utilizing polynomials to describe the distribution of local thicknesses along the surface of the sample. The complete optical characterization of the homogeneous epitaxial ZnSe thin films exhibiting the combined defect consisting of random roughness of the upper boundaries, thickness non-uniformity corresponding to the wedge-shaped model and overlayers occurring on their upper boundaries was performed using the combined method of spectroscopic ellipsometry and spectroscopic reflectometry in paper [43]. The complete optical characterization of the inhomogeneous SiOxCyHz thin films exhibiting thickness non-uniformity and transition layers at their lower boundaries was carried out in paper [45]. The method is illustrated by the complete optical characterization of a selected sample of the inhomogeneous SiOxCyHz thin film exhibiting more complicated thickness non-uniformity than the films optically characterized in our recent paper [45]

Sample preparation
Experimental arrangement
Structural model
Dispersion model
Reflection coefficients of inhomogeneous non-uniform thin films
Ellipsometric parameters of the inhomogeneous non-uniform thin films
Numerical calculations of the integrals
Data processing
Results and discussion
Conclusion
Full Text
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