Abstract
AbstractThe initial oxidation of polycrystalline zirconium has been investigated with XPS and in situ spectroscopic ellipsometry. Oxidations were performed at room temperature at partial oxygen pressures (pO2) of 1.3 × 10−7, 1.3 × 10−6 and 1.3 × 10−5 Pa. Analysis of the measured Zr 3d XPS spectra revealed the presence of a Zr‐enrichment in the oxide contiguous to the metal/oxide interface, as well as at the oxide surface. Investigation of the oxide‐film growth kinetics at various values of pO2, as determined from both the XPS and the ellipsometry measurements, showed the occurrence of an initial regime of very fast, electric‐field controlled growth, followed by a much slower oxidation stage, ending up with a non‐stoichiometric oxide film of ‘limiting’ thickness. Copyright © 2004 John Wiley & Sons, Ltd.
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