Abstract
The authors report a novel approach to analyze the behavior of pulsed-laser-induced epitaxy on group-IV semiconductors by spectroscopic ellipsometry measurements and finite-element modeling of the thermo- and hydrodynamic behavior. Gradient-composition epitaxial crystals are obtained from previously atomically sharp heteroepitaxial samples through optically monitored processing with UV excimer laser pulses. Spectroscopic ellipsometry is employed to determine the composition gradient of the semiconductor alloy, and the results are correlated with energy-dispersive x-ray measurements. A finite-element modeling approach is developed based on the experimentally monitored melting dynamics and composition gradient results for understanding and prediction of the dynamics.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
