Abstract
The growth pits formed during 5-10 μm 4H-SiC epitaxial growth by a home-built vertical hot-wall CVD reactor are investigated and their formation mechanisms are discussed. The origin of the growth pits is believed to be the silicon droplets related to the unoptimized growth condition. The growth pits are successfully removed by adding more HCl to the in-situ etching stage and the after-growth cooling stage.
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