Abstract
The continuous decrease of the effective dielectric constant of the dielectric stack forces Cu-CMP to either directly polish the low-k films or completely remove a higher-k protective cap layer on top of it. The exposure of hydrophobic low-k films to post CMP clean elicits the formation of watermarks on the inhomogeneous wetted patterned surface. In this study, we first confirm the benefit of IPA dryer vs. conventional spin dryer but also in improving the passivity of the Cu surface before the final water rinse by clean chemicals. The improvement in Cu passivity is correlated with lower Cu contamination on the dielectric surface.
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