Elimination of notching phenomenon which occurs while performing deep silicon etching and stopping on an insulating layer

Abstract

The notching phenomenon has been observed during high aspect ratio silicon etching while performing an etch stop on a dielectric layer. It is generally considered as a critical issue in the fabrication of MEMS structures on SOI substrates. This article reports a novel solution for the elimination of the notching while using conventional non-pulsed RF substrate biasing.