Abstract
Junction temperature is of great importance to safe operating area of IGBT modules. Various information of the IGBT operating state is reflected on electrical characteristics during turn-on transient. A unified extraction method for internal junction temperature via dynamic thermo-sensitive electrical parameters (DTSEP) during turn-on transient is proposed. Two DTSEP, turn-on delay time (t don ) and the maximum increasing rate of collector current di c /dt(max), are combined to eliminate the bus voltage impact. Using the inherent emitter-auxiliary inductor L eE in high-power modules, the temperature-dependent DTSEPs can be converted into a low-voltage and measurable signal. Finally, experiment results are exhibited to verify the effectiveness of proposed method.
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