Abstract
Gate Oxide failure analysis during technology qualification led to discovery of the polysilicon hole defects in large (>;200K μm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> ) PMOS capacitors. In-line KLA inspections confirmed that polysilicon holes were formed during the salicide block process module. It is hypothesized that a three way interaction between the P+ source/drain implanted boron, heat added during salicide block mask deposition, and NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> + in the BOE causes the polysilicon hole. By replacing the BOE (Buffered Oxide Etchant) with a 100:1 HF solution, the creation of polysilicon holes was eliminated as confirmed by KLA and VBD testing.
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