Abstract
In this study, we introduce a novel strategy to improve the productivity of perovskite light-emitting diodes (PeLEDs) by incorporating a KBr interface layer alongside PEDOT:PSS as the hole transport layer (HTL). This innovative approach enables the creation of a standard-red perovskite film emitting light precisely at 630 nm. Our investigation demonstrates that optimizing the concentration of the KBr modified layer (10 mg ml−1), in conjunction with an ethylene glycol (EG)-doped PEDOT:PSS electrode, promotes the growth of CsPbBr1.3I1.7 perovskite phases on the HTL while effectively reducing exciton quenching in PEDOT:PSS-based PeLEDs. Furthermore, these modifications lower the work function of the PEDOT:PSS surface, thus regulating hole injection and improving charge balance within the device. Consequently, our device achieves impressive performance metrics, including a high quantum yield of 68.2%, maximum luminance (L max) of 747 cd m−2, and an External Quantum Efficiency (EQE) of 0.24%, representing significant advancements in red perovskite-based lighting technology.
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