Elevated-Temperature STM Study of Ge and Si Growth on Si(001) From GeH4 and Si2H6

James H G Owen ,G Andrew D Briggs ,David R Bowler ,Kazushi Miki ,I Goldfarb

doi:10.1007/978-1-4899-0262-7_22

Elevated-Temperature STM Study of Ge and Si Growth on Si(001) From GeH4 and Si2H6

James H G Owen , G Andrew D Briggs + Show 3 more

https://doi.org/10.1007/978-1-4899-0262-7_22

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Publication Date: Jan 1, 1997

Citations: 1

Affiliation: University of Oxford

#Ge Growth #Si Growth + Show 5 more

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Abstract

In this study we have investigated the mechanism of Si and Ge growth from gaseous precursors, at intermediate temperatures, in elevated-temperature scanning tunnelling microscope (STM). Based on our observations, we suggest a plausible mechanism for the growth of Ge and Si from GeH4 and Si2H6.

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