Abstract
To optimize Si-Sn solvent refining of Si for its use in solar cells, the solid solubility of Sn in Si and diffusion coefficient in a Si-Sn melt at various temperatures were measured by the temperature gradient zone melting (TGZM) method. The solid solubility of Sn in Si was 0.70-1.52×10 in mole fraction in the temperature range of 1273-1655 K. The activity coefficient of Sn in solid Si at infinite dilution relative to the standard state of diamond was RTln = 57,700 (±1,400) (J/mol). The diffusion coefficient in a Si-saturated melt was 1.25-2.51×10 m/s in the temperature range of 1273-1655 K, which was confirmed using Darken's equation.
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