Abstract
The early stages of surfactant- (As, Sb) mediated homoepitaxial growth on Si (111) are examined by scanning tunneling microscopy and extensive ab initio calculations of Si(n) clusters (n</=12). The results reveal the different microscopic behavior of the two surfactants: On As-covered Si (111), one exclusively finds two-dimensional islands with double-layer height which show the (1 x 1) terrace structure. On Sb-covered Si (111), the islands show two different reconstructions: at the rim of the islands a (1 x 1) structure appears, while in the center the (square root 3 x square root 3) terrace structure is observed.
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