Abstract
In this study we investigated the material incorporation efficiencies in GaInAsP and InAsP layers grown on InP substrates for large area metalorganic molecular-beam epitaxy (MOMBE). We found an optimum growth temperature for the quaternary material ( λ G=1.55 μm) around 500–510°C, since in this range the lattice matching shows a temperature coefficient of about 80–120 ppm only. The P incorporation efficiency is improved with increasing growth temperatures (480–520°C). We found for InAsP and GaInAsP ( λ G=1.05 μm) a strong reduction of the P incorporation efficiency with increasing V/III ratio, which is accompanied by a reduced P content in the layer. Additionally with this reduced P, the Ga incorporation efficiency for the quaternary material is improved. Using the same V/III and As/P ratio for the InAsP and GaInAsP material, a higher P content in the InAsP layers is achieved. The results were used as calibration data for the development of a novel type of wafer holder with improved temperature uniformity. For GaInAsP single layers ( λ G=1.55 μm) a standard deviation in emission wavelength of |Δ λ|<1.5 nm was achieved. From the results for all material compositions a temperature distribution with Δ T<1°C can be inferred across a 2″ wafer.
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