Abstract
Boron nitride nanosheets prepared by an exfoliation technique were observed by aberration corrected transmission electron microscopy at 300 kV acceleration voltage. Single boron and nitrogen atoms in a monolayer region were imaged with different image contrast; a boron atom gave 16% less intensity reduction than a nitrogen atom. The number of atoms at each hexagonal ring site was determined by the image intensity that changed discretely with a 0.25-0.30 intensity difference. A double BN sheet was found to have a boron vacancy layer, and a triple BN layer has also a boron deficient layer on the incident surface resulting from the electron beam thinning process. The high sensitivity for atomic species was achieved by the high resolution and a small information limit due to the use of a cold field emission electron source.
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