Abstract
SummaryElectron beam evaporation of siliconHigh rate electron beam evaporation of silicon is a versatile technique to deposit silicon layers with tailored properties on large areas in a cost effective manner. A unique feature of the process is the wide range of deposition rates that can be selected. This technique allows for the deposition of nanometer thin layers with high reproducibility on the one hand, on the other hand layers with thicknesses of several tens of micrometers and low film stress can be deposited within minutes. Due to the high quality of the deposited silicon it is possible to form ultra‐thin layers as contacts in solar cells or for TFT applications or several 10 micrometer thick films as absorbers in LPC solar cells or as “construction” material for MEMS. This article reports on the deposition process, the material properties and illustrates the applicability based on examples from our current research activities.
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