Abstract
ZnSnAs2 thin films were prepared by molecular beam epitaxy (MBE) on semi-insulating (001) InP substrates using the same growth conditions as previously reported. High-resolution X-ray diffractometry (HRXRD) and Raman spectroscopy studies suggest the presence of both the chalcopyrite and sphalerite phases. The transport properties were measured from 5 K up to room temperature. We observed a pronounced peak in the Hall coefficient temperature dependence curve at ∼130 K, similar to those observed only from chalcopyrite-phase bulk ZnSnAs2 in earlier studies. A hole concentration of p = 5.98 ×1018 cm-3, hole mobility of µ= 23.61 cm2/(V·s) and resistivity of ρ= 4.43 ×10-2 Ω·cm were obtained at room temperature.
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