Abstract
A hydrodynamic model describing the electron transport in silicon carbide semiconductors, coupled with the heating of the crystal lattice, is presented. It has been obtained by taking the moments of the coupled Boltzmann equations for the electrons and phonons, and by using the maximum entropy principle. The main advantage of this model is that the transport coefficients are explicitly determined. The model makes use of analytic conduction bands, and the main scattering mechanisms in such semiconductor are taken into account. Simulation results in the bulk case are shown.
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