Electrothermal Simulation of 4H-SiC Power Devices

Abstract

Technology computer aided design (TCAD) models for electrothermal simulation of 4H-SiC devices are presented. The developed models are then used to show that: (1) local heating effects in the highly resistive channels of UMOS devices are not significant and (2) 4H-SiC vertical power MESFETs should have significantly superior switching speeds than equivalent silicon devices. (orig.) 12 refs.