Electrothermal characterization on the interface of self-assembled Van der Waals through vias

Abstract

The thermoelectric properties of InSe/multi-walled carbon nanotubes (MWCNTs) heterojunctions suitable for 3D nano-scale integration are investigated. A shielded pair through-via (SPTV) structure is manufactured in this paper, while methods for characterizing the dielectric effect and eddy current response of the heterojunction interface in the THz band are obtained. Experiments and co-simulations show that the proposed model can accurately capture the nonlinear electromagnetic coupling and thermal carrier relaxation properties in the ultra-wideband. Transient analysis indicates that vertical electrical stress bias and selenide modification can effectively improve the quantum admittance and carrier complexation efficiency at the SPTV interface, and suppress substrate thermal current accumulation. Depletion width sensitively depends on MWCNT layer number and doping concentration, while resistivity significantly effects on thermal electron collection and transient impulse response. By applying high-frequency electrical stress in the (111) direction, the heterojunction can maintain a high carrier mobility, while decrease of oxide charge helps to suppress electromagnetic coupling. This new InSe-MWCNT SPTV has great potential for 3D nano-scale optoelectronic integration.