Abstract
Electrothermal characteristics of PIN diode under the injection of two types of high power electromagnetic pulse signals are numerically simulated by a self-developed semiconductor device simulation GSRES. The curves of burn out time and amplitude of injection electromagnetic pulse (EMP) and high power microwave (HPM) signals are calculated. Response of carriers in diode is numerical simulated. As simulation results show, under the injections of EMP signals, the charge is concentrated in the PN junction, and the peak value of electric field and the hot-dot of device is in the same position; While under the injections of HPM signals, the charge is concentrated in middle part of device, and the peak value of electric field and the hot-dot of device is in the same position. Temperature in the diode rises slower when the frequency of the HPM signals are increasing. These results can be used in radiation hardening for PIN diode limiter.
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