Abstract
Cadmium telluride thin films have been prepared by galvanostatic electrodeposition method using ethylene glycol bath onto different substrates at deposition temperature of 80°C. The films were characterized by X-ray diffraction, optical absorption, scanning electron microscopy and photoelectrochemical techniques. The effect of CdTe film annealing in nitrogen atmosphere on structural, optical and morphological was studied. X-ray diffraction study showed that films are polycrystalline with hexagonal phase. Optical absorption study revealed that CdTe is a direct band gap material with band gap of 1.52 eV. Scanning electron microscopy study revealed that the films are homogeneous without cracks or holes. No significant changes in crystal structure, optical bandgap and crystallinity were observed after annealing. From photoelectrochemical studies, it exhibited n-type conductivity.
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