Electrostatic tuning of the hole density in NdBa2Cu3O(7-delta) films and its effect on the Hall response.

Abstract

We have used the ferroelectric field effect in heterostructures based on superconducting NdBa2-Cu(3)O(7-delta) and ferroelectric Pb(Zr0.2Ti0.8)O3 to electrostatically modulate in a reversible and nonvolatile fashion the hole carrier density of the superconducting layer. Reversing the ferroelectric polarization induces a constant relative change in the resistivity and Hall constant of 9% and 6%, respectively, at all temperatures above the superconducting transition. The cotangent of the Hall angle displays a T2 dependence with a slope that increases as the carrier density is reduced.