Abstract
Electrostatic self-assembly of diamond nanoparticles (DNPs) onto substrate surfaces (so-called nanodiamond seeding) is a notable technique, enabling chemical vapor deposition (CVD) of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar) c-axis oriented sputtered aluminum nitride (AlN) film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions.
Highlights
Chemical vapor deposition (CVD) of nanocrystalline diamond (NCD) on aluminum nitride (AlN) is an epochal approach to combine NCD and AlN [1]
We report on electrostatic self-assembly of diamond nanoparticles (DNPs) onto differently polarized ce-arxeipsoorrtieonnteedlescptruotstetaretidc AselNlf-afislsmemsubrlfyacoefs.DTNhiPssinovnetsotidgiaftfieornensthloywpsotlharaitzAedl-p(eoiltahrer Alor N-fpilomlas,ra)sc-caoxmispaorreidenttoeNd -sppoulatrteorneeds,AolbNtaifinlmDNsPusrfwacitehs.hTighhiesridnevnessityigaantidomn oshreohwosmtohgaetnAeol-upsolylaornfilms, as cotmhepirarseudrfatoceNs. -Tphoeloarrigoinneosf, tohbetsaeidnifDfeNrePnscews iinthdhenigsihtyeranddenhsoimtyogaenndeimtyoisredhisocumssoegdebnaesoeudsolyn tohne their surfahcyeds.rolTyhsies boerhigaviniorofoftAhelNsesudriffafceerse.nces in density and homogeneity is discussed based on the hydro2.lyRseissublteshavior of AlN surfaces
In order to determine the influence of the observed differences in seed density and its homogeneity on chemical vapor deposition (CVD) of NCD thin films, ultrathin NCD films were grown on both Al- and N-polar AlN film surfaces through the electrostatic self-assembly of DNPs
Summary
Chemical vapor deposition (CVD) of nanocrystalline diamond (NCD) on aluminum nitride (AlN) is an epochal approach to combine NCD and AlN [1]. (~40 nm) and highly homogeneous (root mean square (rms) surface roughness of 12 nm) NCD films on thoefmD[N1P].sOhowminoggetnoeosuusclhy aonn eAxlcNelsluernftacpeostaesndtiiaalm, soonmd enuscylsetaetmionatsiictesst,uedniaebslicnogntcheerndienpgoseitlieocntroofstatic self-auslsteram-tbhliyn (o~f4D0 nNmP)saonndtohiAghlNly hsuomrfaogceensehoauvse(rboeoetnmdeoannes.quFaorree(xrmams)psluer,faHceeersouegt hanl.esins voef s1t2ignamte)d the influeNenleCccDetroofsifltmaptHsicoisnneltfah-qaesmusee[om1u]b.slOycwoolfilnoDgiNdtosPsosufocDnhtNoanPAselNxocneslultehrnfeatcdpeeosnthesnaitvtiyealo,bfseoeDmnNedPosysnseat.esFmseoamrtiecbxlsaetmuddpoileens,tocHoAeneclseNrentsiunaglr.faces. The electrostatic self-assembly of DNPs onto Al- and N-polar sputtered AlN film surfaces was carried out using the aforementioned aqueous colloid of DNPs. To enable clear scanning electron microscopy (SEM) observations of the DNPs assembled onto the AlN surfaces, a short-time growth of NCD grains on the AlN surfaces was performed in an ellipsoidal reactor via microwave plasma assisted CVD [13].
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