Electrostatic Potential Distribution Analysis of Silicon Nanowire Field Effect Transistor with Various Channel Length

Abstract

Silicon nanowire FET plays a vital role in building of nanoscale electronic device applications. In this article, the silicon nanowire field effect model is designed with different channel lengths. By using the SiNW FET device model, various electrostatic potential distribution studies are done. This SiNW FET model is reducing the complexity in design. Two types of the device geometries are studied by changing the silicon nanowire channel length as 1000 nm and 200 nm. The 1000 nm channel provides high penetration to the active region of the nanowire FET than the 200 nm channel. This silicon nanowire FET model can apply to many nanoscale biochemical elements sensing applications.