Abstract
A method for mapping the surface conductivity of hydrogen-terminated (H-terminated) diamond on a sub-100nm scale is presented. The measuring technique relies on electrostatic force microscopy imaging of the voltage distribution of a current-carrying H-terminated diamond film. The uniform linear voltage drop in highly conductive H-terminated diamond surface layers indicates that the layers behave as homogeneous, diffusive conductors with a well-defined value of the sheet resistance. On the other hand, we observe conductive as well as insulating regions that coexist for not perfectly H-terminated diamond surfaces with poor electric conductivity.
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