Abstract
AbstractWe have demonstrated an electron pump with in‐plane gate (IPG) transistors fabricated by focused ion beam (FIB) implantation on GaAs–Alx Ga1–x As modulation‐doped heterostructure with a two‐dimensional electron gas (2DEG). The maskless fabrication process does not require any alignment between the circuit elements including the sources, the drains and the gates of the IPG transistors. Although, the device is operating at low frequencies (tens of kHz), it is capable to produce a current more than one order of magnitude higher than other electron pumps based on Coulomb blockade and single electron tunneling effects. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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