Abstract
AbstractElectrostatic doping is widely emerging as an alternative approach to overcome the limitations of traditional chemical doping to provide high charge carrier densities in nanometer-scale semiconductor devices. In this chapter (this work is partly based on Gupta et al. (IEEE Trans Electron Devices 64(8):3044–3055, 2017) and has been expanded with latest insights and developments), various reported approaches on electrostatic doping and related device architectures in different material systems are discussed. It is shown that for the induced electrostatic doping, the role of the metal workfunction, specific semiconductor properties (i.e., electron affinity and energy bandgap), the applied electric field, and the interplay between them are important. The effect of interface traps on the induced charge is also highlighted. In addition, both the performance benefits and major bottlenecks of electrostatic doping for potential future CMOS technology are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
