Abstract
In this study, PbZr0.52Ti0.48O3/BaTiO3 (PZT/BTO) multilayers with varying layer fractions were deposited on Pt/Ti/SiO2/Si substrates by sol–gel process. The films were characterized by X-ray diffraction and scanning electron microscopy (SEM). The result shows that there exists a dielectric enhancement when the BTO layer fraction x is around 0.5, and at this fraction, the dielectric constant of PZT/BTO is 590 at 100 kHz, which is far more than that of monolithic PZT or BTO films (478 and 284, respectively). The thermodynamic analysis shows that the measured dielectric constant is close to the simulation values when x closes to 0.5; otherwise it fit the values caculated by series connection. The result indicates that the internal field resulting from the polarization mismatch between two ferroelectric layers contributes to the enhancement of PZT/BTO heterogeneous thin films.
Highlights
PZT and BTO films have been widely studied because of their excellent properties like ferroelectric, dielectric, pyroelectricity and so on
The result shows that there exists a dielectric enhancement when the BTO layer fraction x is around 0.5, and at this fraction, the dielectric constant of PZT/BTO is 590 at 100 kHz, which is far more than that of monolithic PZT or BTO films (478 and 284, respectively)
The result indicates that the internal field resulting from the polarization mismatch between two ferroelectric layers contributes to the enhancement of PZT/BTO heterogeneous thin films
Summary
PZT and BTO films have been widely studied because of their excellent properties like ferroelectric, dielectric, pyroelectricity and so on. Because of the polarization mismatch [14] between the layers, there exists a built-in electric field between FE-FE or FEPE bilayers, and its electric field strength may change with different layer properties and fraction It may affect the polarization response of multilayer films, and lead to dielectric anomalies at critical layer fraction. PbZr0.52Ti0.48O3/BaTiO3 (PZT/BTO) heterogeneous thin films on Pt/Ti/SiO2/Si substrates were deposited by sol-gel method. Both PZT and BTO have good dielectric and ferroelectric properties. The anomaly of PZT/BTO is explained by thermodynamic modeling, and it has been compared with series-parallel structure to further instruct the electrostatic coupling between films
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