Abstract
We report modulation of the superconducting critical temperature (Tc) of ultrathin niobium diselenide (NbSe2) single crystals by gating an electric double-layer transistor. We realized reversible and irreversible changes of the Tc by adjusting the operating range of the voltage. The reversible and irreversible responses correspond to the electrostatic carrier doping and the electrochemical etching of the crystal, respectively. The results suggest that electric double-layer gating provides opportunities to control and functionalize collective electronic phenomena in two-dimensional crystals.
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