Electrospun InSnMgO Nanofibers Channel to Construct 3D Interface in a Synaptic Transistor for Neuromorphic Electronics

Abstract

Synaptic electronics based on three-terminal transistors can become a promising technology in the neuromorphic field. However, most synaptic transistors are composed of layer-by-layer structures and thin films. Due to the large power consumption and operating voltage, it is difficult to meet the current pursuit of low energy consumption devices. Herein, the artificial synapse behavior is demonstrated through a lithium-based electrolyte-gated transistor with a three-dimensional (3D) interface conduction channel for low-power synapse simulation. The device fabricated by the electrospinning process successfully simulates typical artificial synaptic characteristics under different stimulation intensities. The energy consumption of a single spike of a synaptic device can be as low as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim 1.25$ </tex-math></inline-formula> pJ. In addition, the device simulates behavior similar to the Ebbinghaus memory. This work provides a simple and effective reference for the fabrication of low-voltage artificial synaptic devices.